JANTXV2N5679
TRANS PNP 100V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N5679 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 metal can package, offers a collector-emitter breakdown voltage of 100V and can handle a maximum collector current of 1A. With a power dissipation of 1W and a minimum DC current gain (hFE) of 40 at 250mA and 2V, it provides robust amplification characteristics. The saturation voltage is specified at 1V for 50mA base current and 500mA collector current. Operating across a wide temperature range of -65°C to 200°C, the JANTXV2N5679 meets MIL-PRF-19500/582 qualification, making it suitable for military and aerospace systems. Its low collector cutoff current of 10µA ensures minimal leakage.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/582 |
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