JANTXV2N5671
TRANS NPN 90V 30A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N5671 is an NPN bipolar junction transistor (BJT) designed for high-power switching and amplification applications. This military-grade component, qualified to MIL-PRF-19500/488, features a 90V collector-emitter breakdown voltage (V(BR)CEO) and can handle a continuous collector current (Ic) of up to 30A. The transistor exhibits a minimum DC current gain (hFE) of 20 at 20A and 5V (Vce). Its saturation voltage (Vce(sat)) is specified at a maximum of 5V when driven with 6A base current at 30A collector current. With a maximum power dissipation of 6W, the JANTXV2N5671 is housed in a TO-3 (TO-204AA) package suitable for through-hole mounting. This device is utilized in demanding applications across aerospace, defense, and industrial sectors requiring robust performance under extreme temperature conditions, operating from -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 6A, 30A |
| Current - Collector Cutoff (Max) | 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/488 |