JANTXV2N5667S
TRANS NPN 300V 5A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANTXV2N5667S is an NPN bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 5A. With a specified DC current gain (hFE) of 25 minimum at 1A collector current and 5V collector-emitter voltage, it offers robust amplification characteristics. The transistor dissipates a maximum power of 1.2W and is housed in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting. Operating across a wide temperature range of -65°C to 200°C (TJ), this device is qualified to MIL-PRF-19500/455, indicating its suitability for military and aerospace applications. The collector cutoff current is rated at a maximum of 200nA, and the Vce saturation voltage is 1V maximum at 1A base current and 5A collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.2 W |
| Qualification | MIL-PRF-19500/455 |