JANTXV2N5666
TRANS NPN 200V 5A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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This Microchip Technology NPN bipolar junction transistor, part number JANTXV2N5666, is designed for demanding applications requiring high voltage and current handling. Featuring a collector-emitter breakdown voltage of 200V and a maximum collector current of 5A, this device offers robust performance. The minimum DC current gain (hFE) is 40 at 1A collector current and 5V collector-emitter voltage. With a maximum power dissipation of 1.2W and a saturation voltage of 1V at 1A base and 5A collector current, it ensures efficient operation. This transistor is housed in a TO-205AA, TO-5-3 Metal Can package, suitable for through-hole mounting. Qualified to MIL-PRF-19500/455, it operates reliably across a wide temperature range of -65°C to 200°C. It finds application in aerospace, defense, and industrial sectors where stringent reliability is paramount.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1.2 W |
| Qualification | MIL-PRF-19500/455 |