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JANTXV2N5666

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JANTXV2N5666

TRANS NPN 200V 5A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

This Microchip Technology NPN bipolar junction transistor, part number JANTXV2N5666, is designed for demanding applications requiring high voltage and current handling. Featuring a collector-emitter breakdown voltage of 200V and a maximum collector current of 5A, this device offers robust performance. The minimum DC current gain (hFE) is 40 at 1A collector current and 5V collector-emitter voltage. With a maximum power dissipation of 1.2W and a saturation voltage of 1V at 1A base and 5A collector current, it ensures efficient operation. This transistor is housed in a TO-205AA, TO-5-3 Metal Can package, suitable for through-hole mounting. Qualified to MIL-PRF-19500/455, it operates reliably across a wide temperature range of -65°C to 200°C. It finds application in aerospace, defense, and industrial sectors where stringent reliability is paramount.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 5A
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 5V
Frequency - Transition-
Supplier Device PackageTO-5
GradeMilitary
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max1.2 W
QualificationMIL-PRF-19500/455

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