JANTXV2N5664P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N5664P is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector-emitter breakdown voltage of 200 V and a continuous collector current capability of 5 A. With a maximum power dissipation of 2.5 W and a saturation voltage of 400 mV at 300 mA collector current and 3 A collector current, it is suitable for power switching and amplification circuits. The JANTXV2N5664P exhibits a minimum DC current gain (hFE) of 40 at 1 A collector current and 5 V collector-emitter voltage. Operating across an extended temperature range of -65°C to 200°C, this device meets MIL-PRF-19500/455 qualifications, making it ideal for demanding applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/455 |
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