JANTXV2N5582
TRANS NPN 50V 0.8A TO46-3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N5582 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-46-3 metal can package, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a power dissipation of 500mW and a wide operating temperature range of -55°C to 200°C, it meets stringent military grade requirements, specifically MIL-PRF-19500/423 qualification. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 1V at 50mA and 500mA. This transistor is suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/423 |
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