JANTXV2N5416UA
TRANS PNP 300V 1A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N5416UA is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This surface-mount device features a 300V collector-emitter breakdown voltage and a maximum collector current of 1A. With a power dissipation rating of 750mW, it is suitable for demanding environments. The JANTXV2N5416UA boasts a minimum DC current gain (hFE) of 30 at 50mA and 10V. It operates within an extended temperature range of -65°C to 200°C and is qualified to MIL-PRF-19500/485, indicating its suitability for military and aerospace applications. The device is supplied in a 4-SMD, No Lead package (UA) and is available in bulk packaging. This component is often utilized in power switching and amplification circuits within defense and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 750 mW |
| Qualification | MIL-PRF-19500/485 |
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