JANTXV2N5339U3
TRANS NPN 100V 5A U-3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N5339U3 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This device features a 100V collector-emitter breakdown voltage and a continuous collector current capability of 5A. With a maximum power dissipation of 1W and a Vce(sat) of 1.2V at 500mA/5A, it offers efficient switching performance. The DC current gain (hFE) is a minimum of 60 at 2A/2V. Packaged in a TO-276AA (U-3) surface-mount configuration, it operates across a wide temperature range of -65°C to 200°C. This component meets the stringent requirements of MIL-PRF-19500/560, making it suitable for aerospace, defense, and industrial applications demanding robust performance and extended operational life.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | U-3 (TO-276AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/560 |
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