JANTXV2N5039
TRANS NPN 75V 1UA TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N5039 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This device offers a robust 75V collector-emitter breakdown voltage and a significant 20A collector current capability. Featuring a military-grade qualification under MIL-PRF-19500/439, it ensures reliability in harsh environments. The JANTXV2N5039 exhibits a minimum DC current gain (hFE) of 30 at 2A collector current and 5V Vce. Its saturation voltage is a maximum of 2.5V at 5A base current and 20A collector current. The transistor operates within an extended temperature range of -65°C to 200°C and is housed in a TO-204AA (TO-3) package for efficient thermal management. This component is commonly utilized in power switching, regulation, and amplification circuits across the aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TA) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5A, 20A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Qualification | MIL-PRF-19500/439 |
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