JANTXV2N4236L
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N4236L is a high-reliability PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a continuous collector current (Ic) of 1 A and a maximum collector-emitter breakdown voltage (Vce) of 80 V. With a power dissipation rating of 1 W and a saturation voltage (Vce(sat)) of 600 mV at 100 mA/1 A, it ensures efficient operation. The device features a minimum DC current gain (hFE) of 40 at 100 mA and 1 V. Its military grade qualification (MIL-PRF-19500/580) and wide operating temperature range of -65°C to 200°C make it suitable for aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/580 |