JANTXV2N4235
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N4235 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a TO-39 metal can package, offering robust thermal performance with a maximum power dissipation of 1W. It boasts a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. The device exhibits a minimum DC current gain (hFE) of 40 at 100mA and 1V. Key specifications include a collector-emitter saturation voltage of 600mV at 100mA/1A and a collector cutoff current of 1mA. Qualified to MIL-PRF-19500/580 and operating across a wide temperature range of -65°C to 200°C, this transistor is suitable for military and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/580 |