JANTXV2N4033UA/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology PNP Bipolar Junction Transistor, JANTXV2N4033UA-TR, is a military-grade small-signal device. This PNP transistor features a maximum collector current (Ic) of 1 A and a collector-emitter breakdown voltage (Vce) of 80 V. It offers a minimum DC current gain (hFE) of 100 at 100 mA and 5 V. The transistor is rated for a maximum power dissipation of 500 mW and has a Vce(sat) of 1 V at 100 mA and 1 A. With an operating temperature range from -65°C to 200°C, the JANTXV2N4033UA-TR is packaged in a 4-SMD, No Lead UA case and supplied in Tape & Reel (TR). Its qualification under MIL-PRF-19500/512 makes it suitable for demanding applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/512 |
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