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JANTXV2N4033

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JANTXV2N4033

TRANS PNP 80V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N4033 is a PNP bipolar junction transistor qualified to MIL-PRF-19500/512. This device features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 1 A. With a maximum power dissipation of 800 mW, the JANTXV2N4033 offers a minimum DC current gain (hFE) of 100 at 100 mA and 5 V. Collector cutoff current (ICBO) is specified at a maximum of 10 µA. The saturation voltage (Vce(sat)) is a maximum of 1 V at 100 mA collector current and 1 A collector current. This transistor is housed in a TO-39-3 metal can package (TO-205AD) for through-hole mounting. It operates across an extended temperature range of -55°C to 200°C. Applications include military and aerospace systems requiring high reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageTO-39
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max800 mW
QualificationMIL-PRF-19500/512

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