JANTXV2N4029
TRANS PNP 80V 1A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N4029 is a PNP bipolar junction transistor. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. The maximum power dissipation is 500mW. It offers a minimum DC current gain (hFE) of 100 at 100mA and 5V. The collector cutoff current (ICBO) is a maximum of 10µA. The saturation voltage (Vce Sat) is specified at 1V maximum for an operating point of 100mA collector current driven by 100mA base current. This JANTXV qualified device, meeting MIL-PRF-19500/512, is housed in a TO-18 (TO-206AA) metal can package for through-hole mounting. It is designed for operation across an extended temperature range from -55°C to 200°C. This transistor is commonly utilized in military and harsh environment applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/512 |
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