JANTXV2N3879P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3879P is an NPN bipolar junction transistor designed for high-power applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector-emitter breakdown voltage of 75 V and a continuous collector current capability of 7 A. With a maximum power dissipation of 35 W, it is suitable for demanding environments. The transistor exhibits a minimum DC current gain (hFE) of 40 at 500 mA and 5 V, and a saturation voltage (Vce(sat)) of 1.2 V at 400 mA and 4 A. It operates within a temperature range of -65°C to 200°C. This component meets MIL-PRF-19500/526 qualification standards, making it appropriate for aerospace and defense industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 25mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Power - Max | 35 W |
| Qualification | MIL-PRF-19500/526 |