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JANTXV2N3792P

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JANTXV2N3792P

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology JANTXV2N3792P is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a robust TO-204AA (TO-3) package, suitable for through-hole mounting and operation across an extended temperature range of -65°C to 200°C. With a maximum collector current (Ic) of 10 A and a power dissipation rating of 5 W, it is well-suited for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 50 at 1 A and 2 V, and its collector-emitter breakdown voltage (Vce) is rated at 80 V. The saturation voltage (Vce Sat) is a maximum of 2.5 V at 2 A collector current and the corresponding base current. This transistor is commonly utilized in industrial power control, aerospace, and defense systems where reliability and performance under extreme conditions are paramount.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 2A, 10A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1A, 2V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max5 W

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