JANTXV2N3791
TRANS PNP 60V 10A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3791 is a PNP bipolar junction transistor (BJT) designed for high-power switching and amplification applications. This military-grade component, qualified under MIL-PRF-19500/379, offers a breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of up to 10A. With a maximum power dissipation of 5W and a low saturation voltage (Vce(sat)) of 2.5V at 2A collector current and 10A base current, it ensures efficient operation. The transistor exhibits a minimum DC current gain (hFE) of 30 at 3A collector current and 2V collector-emitter voltage. Housed in a TO-3 (TO-204AA) package, the JANTXV2N3791 is suitable for demanding environments with an operating temperature range of -65°C to 200°C. This device finds application in power supply regulation, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 2A, 10A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
| Qualification | MIL-PRF-19500/379 |