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JANTXV2N3791

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JANTXV2N3791

TRANS PNP 60V 10A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N3791 is a PNP bipolar junction transistor (BJT) designed for high-power switching and amplification applications. This military-grade component, qualified under MIL-PRF-19500/379, offers a breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of up to 10A. With a maximum power dissipation of 5W and a low saturation voltage (Vce(sat)) of 2.5V at 2A collector current and 10A base current, it ensures efficient operation. The transistor exhibits a minimum DC current gain (hFE) of 30 at 3A collector current and 2V collector-emitter voltage. Housed in a TO-3 (TO-204AA) package, the JANTXV2N3791 is suitable for demanding environments with an operating temperature range of -65°C to 200°C. This device finds application in power supply regulation, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 2A, 10A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max5 W
QualificationMIL-PRF-19500/379

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