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JANTXV2N3772

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JANTXV2N3772

TRANS NPN 60V 20A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology JANTXV2N3772 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 20A, with a power dissipation of 6W. The JANTXV2N3772 offers a minimum DC current gain (hFE) of 15 at 10A and 4V. It operates within a wide temperature range of -65°C to 200°C. Packaged in a TO-3 (TO-204AA) through-hole configuration, this device meets MIL-PRF-19500/518 qualification, indicating its suitability for military and aerospace environments. Applications include power switching, linear amplification, and voltage regulation in robust electronic systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 4A, 20A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10A, 4V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max6 W
QualificationMIL-PRF-19500/518

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