JANTXV2N3772
TRANS NPN 60V 20A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3772 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 20A, with a power dissipation of 6W. The JANTXV2N3772 offers a minimum DC current gain (hFE) of 15 at 10A and 4V. It operates within a wide temperature range of -65°C to 200°C. Packaged in a TO-3 (TO-204AA) through-hole configuration, this device meets MIL-PRF-19500/518 qualification, indicating its suitability for military and aerospace environments. Applications include power switching, linear amplification, and voltage regulation in robust electronic systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 4A, 20A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 10A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/518 |
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