JANTXV2N3767P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N3767P is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a robust 80 V collector-emitter breakdown voltage and can handle up to 4 A of collector current. With a maximum power dissipation of 25 W and a saturation voltage of 2.5 V at 1 A collector current, it is well-suited for demanding power switching and amplification tasks. The device features a minimum DC current gain (hFE) of 40 at 500 mA collector current, ensuring efficient operation. Operating across a wide temperature range of -65°C to 200°C, this transistor finds application in industrial, aerospace, and defense systems requiring reliable high-power performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |