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JANTXV2N3766

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JANTXV2N3766

TRANS NPN 60V 4A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N3766 is a high-reliability NPN bipolar junction transistor designed for demanding applications. This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 4A, with a power dissipation capability of 25W. The JANTXV2N3766 offers a minimum DC current gain (hFE) of 40 at 500mA and 5V. It is specified with a Vce(sat) of 2.5V at 100mA and 1A, and a collector cutoff current (Icbo) of 500µA. Packaged in a TO-213AA (TO-66) through-hole configuration, this component operates across a wide temperature range of -65°C to 200°C. It meets MIL-PRF-19500/518 qualification standards, making it suitable for use in defense, aerospace, and industrial sectors requiring robust performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max25 W
QualificationMIL-PRF-19500/518

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