JANTXV2N3749
TRANS NPN 80V 5A TO111Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3749 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 80V collector-emitter breakdown voltage and a maximum continuous collector current of 5A. It offers a minimum DC current gain (hFE) of 40 at 1A and 2V, with a saturation voltage (Vce) of 1.5V at 500mA and 5A. The transistor is rated for 2W power dissipation and operates across a wide temperature range of -65°C to 200°C. Packaged in a TO-111 stud mount configuration and meeting MIL-PRF-19500/315 qualification, this device is suitable for applications in aerospace, defense, and industrial control systems requiring high reliability and robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | MIL-PRF-19500/315 |
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