JANTXV2N3741
TRANS PNP 80V 4A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3741 is a PNP bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-66 (TO-213AA) package, features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce(max)) of 80 V. With a maximum power dissipation of 25 W and a wide operating temperature range of -65°C to 200°C (TJ), it is qualified to MIL-PRF-19500/441 military specifications. The device exhibits a minimum DC current gain (hFE) of 30 at 250 mA and 1 V, and a saturation voltage (Vce(sat)) of 600 mV at 125 mA and 1 A. Applications include high-reliability power switching and amplification in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
| Qualification | MIL-PRF-19500/441 |
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