JANTXV2N3737UB
TRANS NPN 40V 1.5AManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3737UB is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V. This device offers a continuous collector current capability of 1.5A and a maximum power dissipation of 500mW. It features a minimum DC current gain (hFE) of 20 at 1A collector current and 1.5V Vce. The saturation voltage (Vce(sat)) is specified at 900mV maximum for a base current of 100mA driving a collector current of 1A. Collector cutoff current (ICBO) is a maximum of 10µA. This military-grade component is qualified under MIL-PRF-19500/395 and operates across a wide temperature range of -65°C to 200°C. It is supplied in a UB package for surface mounting. This transistor is suitable for applications in aerospace and defense, and other high-reliability systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/395 |
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