JANTXV2N3716P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3716P is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a collector-emitter breakdown voltage of 80 V and a maximum collector current of 10 A. With a power dissipation capability of 5 W and a minimum DC current gain (hFE) of 50 at 1 A and 2 V, it is suitable for demanding operational environments. The saturation voltage at 2 A collector current is a maximum of 2.5 V. This device meets MIL-PRF-19500/408 qualification and operates reliably across a wide temperature range of -65°C to 200°C (TJ). Its robust construction and performance characteristics make it a reliable choice for military and industrial power switching and amplifier circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 2A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 5 W |
| Qualification | MIL-PRF-19500/408 |