JANTXV2N3635UB
TRANS PNP 140V 1A 3SMDManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3635UB is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a 140V collector-emitter breakdown voltage and a continuous collector current capability of 1A. It features a maximum power dissipation of 1.5W and a low saturation voltage of 600mV at 5mA base current and 50mA collector current. The DC current gain (hFE) is a minimum of 100 at 50mA collector current and 10V collector-emitter voltage. Operating across an extended temperature range of -65°C to 200°C, this transistor meets stringent military specifications, including MIL-PRF-19500/357, and is supplied in a 3-SMD, No Lead (UB) surface-mount package. It is commonly utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1.5 W |
| Qualification | MIL-PRF-19500/357 |
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