JANTXV2N3583
TRANS NPN 175V 1A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3583 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage of 175V and a continuous collector current capability of 1A, suitable for power switching and amplification tasks where robust performance is critical. With a maximum power dissipation of 35W and a wide operating temperature range of -65°C to 200°C, it is engineered for demanding environmental conditions. The transistor is housed in a TO-66 (TO-213AA) package, facilitating through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 500mA and 10V. This device finds application in aerospace, defense, and industrial control systems requiring dependable operation under stringent conditions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Current - Collector Cutoff (Max) | 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 35 W |
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