JANTXV2N3501UB/TR
TRANS NPN 150V 0.3A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N3501UB-TR is a high-reliability NPN bipolar junction transistor designed for demanding applications. This military-grade component offers a 150V collector-emitter breakdown voltage and a continuous collector current capability of up to 300mA. It features a maximum power dissipation of 500mW and a saturation voltage of 400mV at 15mA base current and 150mA collector current. The minimum DC current gain (hFE) is rated at 100 when operating at 150mA collector current and 10V collector-emitter voltage. This device is qualified to MIL-PRF-19500/366 and operates across a wide temperature range of -65°C to 200°C. The JANTXV2N3501UB-TR is supplied in a UB package for surface mounting, delivered on tape and reel. It finds application in aerospace, defense, and other high-reliability electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |
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