JANTXV2N3501L
TRANS NPN 150V 0.3A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N3501L is an NPN bipolar junction transistor designed for high-reliability applications. This device features a 150V collector-emitter breakdown voltage and a continuous collector current capability of 300mA, with a maximum power dissipation of 1W. The TO-205AA (TO-5) metal can package is suitable for through-hole mounting. Key specifications include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a saturation voltage (Vce) of 400mV at 15mA base current and 150mA collector current. It exhibits a low collector cutoff current (ICBO) of 10µA. This component's military grade qualification (MIL-PRF-19500/366) and extended operating temperature range of -65°C to 200°C make it suitable for demanding environments in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |