JANTXV2N3499UB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANTXV2N3499UB-TR is an NPN bipolar junction transistor designed for demanding applications. This device offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 500 mA, with a maximum power dissipation of 1 W. Featuring a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, the JANTXV2N3499UB-TR exhibits low saturation voltage (Vce Sat) of 600mV at 30mA base current and 300mA collector current. The transistor operates across a wide temperature range from -65°C to 200°C. This military-grade component, qualified to MIL-PRF-19500/366, is supplied in a 3-SMD, No Lead UB package and is provided on tape and reel. It finds application in aerospace, defense, and high-reliability industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5347
PNP TRANSISTORS
JANSG2N2222AUBC/TR
RH SMALL-SIGNAL BJT
