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JANTXV2N3499UB/TR

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JANTXV2N3499UB/TR

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N3499UB-TR is an NPN bipolar junction transistor designed for demanding applications. This device offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 500 mA, with a maximum power dissipation of 1 W. Featuring a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, the JANTXV2N3499UB-TR exhibits low saturation voltage (Vce Sat) of 600mV at 30mA base current and 300mA collector current. The transistor operates across a wide temperature range from -65°C to 200°C. This military-grade component, qualified to MIL-PRF-19500/366, is supplied in a 3-SMD, No Lead UB package and is provided on tape and reel. It finds application in aerospace, defense, and high-reliability industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W
QualificationMIL-PRF-19500/366

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