JANTXV2N3498UB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANTXV2N3498UB-TR is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This surface mount device, packaged in a UB (3-SMD, No Lead) configuration on tape and reel, offers a 100V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a DC current gain (hFE) of at least 40 at 150mA and 10V, and a maximum power dissipation of 1W, it is suitable for power switching and amplification tasks. The device features a low saturation voltage of 600mV at 30mA base current and 300mA collector current, and a collector cutoff current (ICBO) of 10µA. Rated for military grade with MIL-PRF-19500/366 qualification, it operates reliably across an extended temperature range of -65°C to 200°C. This component finds application in aerospace, defense, and industrial systems requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |
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