JANTXV2N3421S
TRANS NPN 80V 3A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N3421S is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/393, features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 3A. With a power dissipation of 1W and a DC current gain (hFE) of at least 40 at 1A and 2V, it offers robust performance. The transistor exhibits a Vce(sat) of 500mV at 200mA collector current and 2A collector current. It operates within an extended temperature range of -65°C to 200°C. The JANTXV2N3421S is supplied in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting, and is available in bulk packaging. This component finds application in military and aerospace systems, high-reliability power supply circuits, and general-purpose amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 5µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/393 |
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