JANTXV2N2906AUB
TRANS PNP 60V 0.6A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N2906AUB is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability and performance. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA, with a power dissipation of 500mW. The JANTXV2N2906AUB is specified with a minimum DC current gain (hFE) of 40 at 150mA and 10V. It exhibits a Vce saturation of 1.6V at 50mA and 500mA. The device is qualified to MIL-PRF-19500/291, indicating its suitability for military-grade applications. Packaged in a UB (3-SMD, No Lead) surface-mount configuration, this transistor operates across a wide temperature range of -65°C to 200°C. This component is commonly utilized in aerospace, defense, and high-temperature industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |