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JANTXV2N2906AUB

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JANTXV2N2906AUB

TRANS PNP 60V 0.6A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N2906AUB is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability and performance. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA, with a power dissipation of 500mW. The JANTXV2N2906AUB is specified with a minimum DC current gain (hFE) of 40 at 150mA and 10V. It exhibits a Vce saturation of 1.6V at 50mA and 500mA. The device is qualified to MIL-PRF-19500/291, indicating its suitability for military-grade applications. Packaged in a UB (3-SMD, No Lead) surface-mount configuration, this transistor operates across a wide temperature range of -65°C to 200°C. This component is commonly utilized in aerospace, defense, and high-temperature industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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