JANTXV2N2905AL
TRANS PNP 60V 0.6A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N2905AL is a PNP bipolar junction transistor designed for demanding applications requiring high reliability and performance. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA, with a power dissipation of 800mW. Achieving a minimum DC current gain (hFE) of 100 at 150mA and 10V, it offers stable amplification characteristics. The transistor exhibits a Vce saturation of 1.6V at 50mA collector current and 500mA collector current. With a low collector cutoff current of 1µA, it ensures minimal leakage. The JANTXV2N2905AL is manufactured to MIL-PRF-19500/290 qualification standards, indicating its suitability for military and aerospace environments. It is packaged in a TO-5 metal can (TO-205AA) for through-hole mounting and operates across a wide temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/290 |
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