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JANTXV2N2905AL

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JANTXV2N2905AL

TRANS PNP 60V 0.6A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANTXV2N2905AL is a PNP bipolar junction transistor designed for demanding applications requiring high reliability and performance. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA, with a power dissipation of 800mW. Achieving a minimum DC current gain (hFE) of 100 at 150mA and 10V, it offers stable amplification characteristics. The transistor exhibits a Vce saturation of 1.6V at 50mA collector current and 500mA collector current. With a low collector cutoff current of 1µA, it ensures minimal leakage. The JANTXV2N2905AL is manufactured to MIL-PRF-19500/290 qualification standards, indicating its suitability for military and aerospace environments. It is packaged in a TO-5 metal can (TO-205AA) for through-hole mounting and operates across a wide temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max800 mW
QualificationMIL-PRF-19500/290

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