JANTXV2N2484
TRANS NPN 60V 0.05A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANTXV2N2484 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage (Vce) of 60 V and a maximum collector current (Ic) of 50 mA. With a power dissipation rating of 360 mW, it is suitable for through-hole mounting in a TO-18 package. The device exhibits a minimum DC current gain (hFE) of 225 at 10 mA collector current and 5 V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 300 mV at 100 µA base current and 1 mA collector current. Collector cutoff current (Ic) is a maximum of 2 nA. This JANTXV qualified component, meeting MIL-PRF-19500/376, is engineered for operation across an extended temperature range of -65°C to 200°C. It finds application in military and aerospace electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 225 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/376 |
Request a Quote
Clients Also Buy
JAN2N5339U3
TRANS NPN 100V 5A U-3
JANTX2N3507A
TRANS NPN 50V 3A TO39
JANSL2N2369AUA/TR
TRANS NPN 15V UA
