JANTXV2N2369AUB/TR
TRANS NPN 20V UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology NPN Bipolar Junction Transistor, part number JANTXV2N2369AUB-TR, is a high-reliability component qualified to MIL-PRF-19500/317. This surface mount device, supplied in a UB package on tape and reel, operates within a temperature range of -65°C to 200°C. It features a maximum collector-emitter breakdown voltage of 20V and a maximum power dissipation of 400mW. The transistor exhibits a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage. Saturation voltage at 10mA base current and 100mA collector current is a maximum of 450mV. Collector cutoff current is specified at 400nA maximum. This component is suitable for demanding applications in aerospace, defense, and industrial sectors requiring robust performance and stringent qualification standards.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 400 mW |
| Qualification | MIL-PRF-19500/317 |
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