JANTXV2N2222AUB/TR
TRANS NPN 50V 0.8A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N2222AUB-TR is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA, with a power dissipation of 500mW. It offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor operates across a wide temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/255, indicating its suitability for demanding military and aerospace environments. The JANTXV2N2222AUB-TR is provided in a 3-SMD, No Lead UB package, supplied on tape and reel (TR) for efficient surface-mount assembly. This device is commonly found in power switching and amplification circuits within defense, aerospace, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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