JANTX2N718A
TRANS NPN 30V 0.5A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N718A is a military-grade NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 500mA. With a maximum power dissipation of 500mW, it is suitable for demanding operating environments, supporting junction temperatures from -65°C to 200°C. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V. The Vce saturation is specified at a maximum of 1.5V for an Ib of 15mA and Ic of 150mA. The JANTX2N718A is packaged in a TO-18 (TO-206AA) metal can configuration, compliant with MIL-PRF-19500/181 qualification. This device is commonly utilized in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/181 |
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