Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

JANTX2N6649

Banner
productimage

JANTX2N6649

TRANS PNP DARL 60V 10A TO204AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N6649 is a PNP Darlington bipolar junction transistor designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current (Ic) capability of 10A. It offers a high DC current gain (hFE) of 1000 minimum at 5A and 3V. The transistor's saturation voltage (Vce Sat) is a maximum of 3V at 100mA collector current and 10A Ic. With a maximum power dissipation of 5W, it is housed in a TO-204AA (TO-3) package suitable for through-hole mounting. The JANTX2N6649 meets MIL-PRF-19500/527 qualification, indicating its suitability for military and high-reliability applications across industries such as aerospace, defense, and industrial control systems. It operates within a temperature range of -65°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max5 W
QualificationMIL-PRF-19500/527

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy