Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

JANTX2N6649

Banner
productimage

JANTX2N6649

TRANS PNP DARL 60V 10A TO204AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N6649 is a PNP Darlington bipolar junction transistor designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current (Ic) capability of 10A. It offers a high DC current gain (hFE) of 1000 minimum at 5A and 3V. The transistor's saturation voltage (Vce Sat) is a maximum of 3V at 100mA collector current and 10A Ic. With a maximum power dissipation of 5W, it is housed in a TO-204AA (TO-3) package suitable for through-hole mounting. The JANTX2N6649 meets MIL-PRF-19500/527 qualification, indicating its suitability for military and high-reliability applications across industries such as aerospace, defense, and industrial control systems. It operates within a temperature range of -65°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max5 W
QualificationMIL-PRF-19500/527

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
JANTXV2N6649

TRANS PNP DARL 60V 10A TO204AA

product image
JANTX2N3418

TRANS NPN 60V 3A TO5

product image
JAN2N2605

TRANS PNP 60V 0.03A TO46-3