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JANTX2N6385

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JANTX2N6385

TRANS NPN DARL 80V 10A TO204AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N6385 is an NPN Darlington bipolar junction transistor (BJT) designed for high-power switching applications. This component offers a collector-emitter breakdown voltage (Vce) of 80V and a continuous collector current (Ic) capability of 10A. With a maximum power dissipation of 6W and a low saturation voltage (Vce Sat) of 3V at 100mA/10A, it ensures efficient operation. The device features a high DC current gain (hFE) of 1000 at 5A/3V, characteristic of Darlington configurations. Specified for military-grade performance, it is qualified under MIL-PRF-19500/523 and operates across a wide temperature range of -55°C to 175°C. The JANTX2N6385 is packaged in a TO-204AA (TO-3) through-hole package, suitable for demanding industrial, aerospace, and defense applications requiring robust and reliable power control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max6 W
QualificationMIL-PRF-19500/523

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