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JANTX2N6383

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JANTX2N6383

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N6383 is an NPN Darlington bipolar transistor designed for demanding applications. This component offers a 40V collector-emitter breakdown voltage and a continuous collector current capability of 10A. It features a high DC current gain (hFE) of 1000 minimum at 5A and 3V, indicative of its low saturation voltage of 3V maximum at 100mA and 10A. With a maximum power dissipation of 6W and an operating temperature range of -55°C to 175°C, the JANTX2N6383 is suitable for military-grade applications, adhering to MIL-PRF-19500/523 qualification. The TO-204AA (TO-3) package facilitates through-hole mounting.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max6 W
QualificationMIL-PRF-19500/523

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