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JANTX2N6341

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JANTX2N6341

TRANS NPN 150V 25A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology JANTX2N6341 is an NPN bipolar junction transistor designed for high-power, high-voltage applications. This device features a maximum collector current of 25A and a collector-emitter breakdown voltage of 150V. The transistor exhibits a minimum DC current gain (hFE) of 30 at 10A and 2V, with a saturation voltage (Vce(sat)) of 1.8V at 2.5A collector current. It is rated for a maximum power dissipation of 200W and operates within a temperature range of -65°C to 175°C. Packaged in a TO-3 (TO-204AA) through-hole configuration, the JANTX2N6341 meets MIL-PRF-19500/509 qualification, making it suitable for military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10A, 2V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max200 W
QualificationMIL-PRF-19500/509

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