JANTX2N6338
TRANS NPN 100V 25A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N6338 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This component features a 100V collector-emitter breakdown voltage and a continuous collector current capability of 25A. With a maximum power dissipation of 200W, it is suitable for demanding environments. The JANTX2N6338 offers a minimum DC current gain (hFE) of 30 at 10A and 2V, and a saturation voltage (Vce Sat) of 1.8V at 2.5A and 25A. It operates across a wide temperature range of -65°C to 200°C (TJ). Packaged in a TO-3 (TO-204AA) metal can with through-hole mounting, this device meets MIL-PRF-19500/509 qualification for military-grade performance. Its robust specifications make it ideal for use in power supply circuits, motor control, and audio amplification within aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2.5A, 25A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 200 W |
| Qualification | MIL-PRF-19500/509 |
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