JANTX2N6301P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANTX2N6301P is an NPN Darlington power bipolar transistor. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 8A, with a maximum power dissipation of 75W. It features a high DC current gain (hFE) of a minimum 750 at 4A collector current and 3V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 3V at 80mA base current and 8A collector current. The JANTX2N6301P is housed in a TO-66 (TO-213AA) package, suitable for through-hole mounting. Designed for demanding applications, it operates across a wide temperature range of -55°C to 200°C. This transistor is commonly utilized in power switching and amplification circuits across various industrial and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
JANS2N5666U3
TRANS NPN 200V 5A U3
2C3999
POWER BJT
