JANTX2N6301
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTX2N6301 is an NPN bipolar junction transistor featuring a Darlington configuration. This through-hole device, housed in a TO-66 (TO-213AA) package, is rated for 80V collector-emitter breakdown voltage and 8A continuous collector current, with a maximum power dissipation of 75W. It exhibits a minimum DC current gain (hFE) of 750 at 4A and 3V. Saturation voltage is specified at a maximum of 3V for 80mA base current and 8A collector current. The JANTX2N6301 is qualified to MIL-PRF-19500/539, indicating its suitability for demanding military applications. Its robust performance and high gain make it a candidate for power switching and amplification circuits in aerospace, defense, and industrial control systems. Operating temperature range is from -55°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
| Qualification | MIL-PRF-19500/539 |
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