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JANTX2N6300

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JANTX2N6300

TRANS NPN DARL 60V 8A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N6300 is an NPN Darlington bipolar junction transistor. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 8A. It offers a minimum DC current gain (hFE) of 750 at 4A and 3V, with a Vce(sat) of 3V at 80mA and 8A. The maximum power dissipation is 75W. The JANTX2N6300 is packaged in a TO-66 (TO-213AA) through-hole configuration. This device meets MIL-PRF-19500/539 qualification and operates across a wide temperature range of -55°C to 200°C. It is suitable for applications in the aerospace and defense industries.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max75 W
QualificationMIL-PRF-19500/539

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