JANTX2N6299P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTX2N6299P is a high-power PNP Darlington bipolar junction transistor (BJT) rated for 80V collector-emitter breakdown voltage and 8A continuous collector current. This device dissipates up to 64W and features a high DC current gain (hFE) of a minimum of 750 at 4A collector current and 3V Vce. The saturation voltage (Vce(sat)) is a maximum of 2V at 80mA base current and 8A collector current. Designed for through-hole mounting in a TO-66 (TO-213AA) package, the JANTX2N6299P operates within a temperature range of -65°C to 175°C (TJ). This component is suitable for applications in industrial and military sectors requiring robust power switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |
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