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JANTX2N6299P

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JANTX2N6299P

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's JANTX2N6299P is a high-power PNP Darlington bipolar junction transistor (BJT) rated for 80V collector-emitter breakdown voltage and 8A continuous collector current. This device dissipates up to 64W and features a high DC current gain (hFE) of a minimum of 750 at 4A collector current and 3V Vce. The saturation voltage (Vce(sat)) is a maximum of 2V at 80mA base current and 8A collector current. Designed for through-hole mounting in a TO-66 (TO-213AA) package, the JANTX2N6299P operates within a temperature range of -65°C to 175°C (TJ). This component is suitable for applications in industrial and military sectors requiring robust power switching and amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max64 W

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