JANTX2N6299
TRANS PNP DARL 80V 8AManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N6299 is a PNP Darlington bipolar transistor designed for demanding applications requiring high current gain and power handling. This through-hole component, packaged in TO-213AA (TO-66-2), features a maximum collector current (Ic) of 8A and a collector-emitter breakdown voltage (Vce(max)) of 80V. With a maximum power dissipation of 64W and a typical DC current gain (hFE) of 750 at 4A and 3V, the JANTX2N6299 excels in switching and amplification circuits. Its military-grade qualification (MIL-PRF-19500/540) and wide operating temperature range of -65°C to 175°C make it suitable for aerospace, defense, and industrial control systems. The saturation voltage (Vce(sat)) is a maximum of 2V at 16mA base current and 4A collector current, with a collector cutoff current (Ic) of 500µA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Grade | Military |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |
| Qualification | MIL-PRF-19500/540 |