JANTX2N6283
TRANS NPN DARL 80V 20A TO204Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N6283 is an NPN Darlington bipolar junction transistor (BJT) designed for high-power switching applications. This through-hole component features a TO-204AA (TO-3) package, delivering robust thermal performance. It offers a maximum collector current of 20 A and a collector-emitter breakdown voltage of 80 V. The device boasts a minimum DC current gain (hFE) of 1500 at 1 A and 3 V, with a Vce saturation of 3 V at 200 mA and 20 A. With a maximum power dissipation of 175 W and an operating temperature range of -65°C to 200°C, the JANTX2N6283 is qualified to MIL-PRF-19500/504, indicating its suitability for demanding military and industrial environments. Typical applications include power supply regulation, motor control, and general-purpose amplification where high current gain and power handling are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 1A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 175 W |
| Qualification | MIL-PRF-19500/504 |