JANTX2N6059
TRANS NPN DARL 100V 12A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTX2N6059 is an NPN Darlington bipolar transistor designed for demanding applications. This component features a 100V collector-emitter breakdown voltage and a continuous collector current capability of 12A, with a maximum power dissipation of 150W. Achieving a minimum DC current gain (hFE) of 1000 at 6A and 3V, it offers significant amplification. The saturation voltage (Vce Sat) is a maximum of 3V at 120mA collector current and 12A collector current. This device is housed in a TO-204AA (TO-3) package for through-hole mounting and operates across a temperature range of -55°C to 175°C. Qualified to MIL-PRF-19500/502, the JANTX2N6059 is suitable for military and high-reliability industrial sectors, including power control and switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
| Qualification | MIL-PRF-19500/502 |
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