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JANTX2N6033

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JANTX2N6033

TRANS NPN 120V 40A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTX2N6033 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-3 package (TO-204AA), offers a maximum collector-emitter breakdown voltage of 120 V and a continuous collector current capability of 40 A. With a maximum power dissipation of 140 W and a minimum DC current gain (hFE) of 10 at 40 A and 2 V, it is suitable for power switching and amplification roles. The JANTX2N6033 meets MIL-PRF-19500/528 qualification, indicating its suitability for military and aerospace environments. Its operating temperature range extends from -65°C to 200°C, ensuring robust performance under extreme conditions. This transistor finds application in power control, voltage regulation, and audio amplification circuits within these qualified industries.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TA)
Current - Collector Cutoff (Max)25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 40A, 2V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max140 W
QualificationMIL-PRF-19500/528

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